Observation of 4 nm pitch stripe domains formed by exposing graphene to ambient air.

Observation of 4 nm pitch stripe domains formed by exposing graphene to ambient air.
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DOI:
10.1021/nn403988y
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发表时间:
2013-10
期刊:
影响因子:
17.1
通讯作者:
Daniel S. Wastl;F. Speck;Elisabeth Wutscher;M. Ostler;T. Seyller;F. Giessibl
Daniel S. Wastl;F. Speck;Elisabeth Wutscher;M. Ostler;T. Seyller;F. Giessibl
中科院分区:
材料科学1区
文献类型:
--
作者:
Daniel S. Wastl;F. Speck;Elisabeth Wutscher;M. Ostler;T. Seyller;F. Giessibl

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我们使用调频原子力显微镜在环境条件下研究了6 H-SiC(0001)表面上的外延石墨烯。我们观察到大的梯田与自组装的条纹结构内的高度吸附覆盖的表面上的石墨烯。为了确定该结构的起源,我们将石墨烯的实验数据与预测在疏水表面的固-液界面中形成固-气单层的石墨的计算和实验进行了比较。
We study epitaxial graphene on the 6H-SiC(0001) surface under ambient conditions using frequency-modulation atomic force microscopy. We observe large terraces with a self-assembled stripe structure within a highly adsorbate covered surface on top of the graphene. To identify the origin of the structure, we compare the experimental data on graphene with calculations and experiments on graphite that predict the formation of a solid-gas monolayer in the solid-liquid interface of hydrophobic surfaces.