Influence of patterning fluctuation on read/write characteristics in discrete track and bit patterned media

Influence of patterning fluctuation on read/write characteristics in discrete track and bit patterned media
复制标题

图案波动对离散磁道和位图案介质读/写特性的影响

DOI:
10.1016/j.jmmm.2008.08.063
复制
发表时间:
2008
影响因子:
2.7
通讯作者:
Y. Ikeda
Y. Ikeda
中科院分区:
材料科学3区
文献类型:
--
作者:
M. Hashimoto;K. Miura;H. Muraoka;H. Aoi;R. Wood;M. Salo;Y. Ikeda

文献摘要

参考文献

被引文献

相似文献

通过模拟非图像化介质(NPM)、离散磁道介质(DTM)和位图像化介质(BPM)的磁化分布和DTM的图像化波动,研究了它们的读写特性。通过自旋-支架测量与计算对比,利用Voronoi细胞磁团模型很好地表征了NPM的磁化分布,其中轨道边缘< Dedge >的磁团大小比轨道中心< Dcenter >的磁团大小大2倍。基于对DTM扫描电镜图像中图案波动的分析,将线边缘粗糙度(LER)建模为长波中心线粗糙度(CLR)和短波线宽度粗糙度(LWR)。证实了NPM的图案波动的标准差远小于磁波动的标准差。这使得DTM比NPM获得更高的脱轨性能。通过检查747条曲线,发现DTM在轨道密度方面具有高达约25%的优势,假设在高轨道密度下可以很好地控制图案波动。在BPM中,制造精确的点是必不可少的。研究了点位缺缺率与图案波动之间的关系,推导出达到1Tbspi的最大允许标准偏差为2nm。
The read/write characteristics of non-patterned media (NPM), discrete track media (DTM), and bit patterned media (BPM) are examined by modeling the magnetization distribution of NPM and patterning fluctuation of DTM. By comparing spin-stand measurement with calculation, the magnetization distribution of NPM was well characterized with a new Voronoi cell magnetic cluster model, in which the cluster size at the track edge, 〈Dedge〉, was larger than that at the track center, 〈Dcenter〉 by a factor of two. Based on an analysis of patterning fluctuations seen in SEM images of DTM, line-edge roughness (LER) was modeled as a long-wavelength center-line roughness (CLR) plus a short-wavelength line-width roughness (LWR). It was confirmed that the standard deviation of the patterning fluctuation was much smaller than that of the magnetic fluctuation for NPM. This allowed DTM to achieve higher off-track performance than NPM. By examining the 747 curves, it was revealed that DTM could have an advantage in track-density of up to approximately 25% assuming patterning fluctuations can be well controlled at high track density. In BPM, fabricating accurate dots is essential. The relationship between dot defect rate and patterning fluctuation was examined, and the maximum allowable standard deviation of LER was derived as 2nm for achieving 1Tbspi.
DOI: --
发表时间: 2006
期刊: IEEE TRANSACTIONS ON MAGNETICS 42
影响因子: --
作者:
K.Miura;D.Sudo;M.Hashimoto;et al.
通讯作者: et al.