A High-Power Temperature-Stable Electrostatic RF MEMS Capacitive Switch Based on a Thermal Buckle-Beam Design
A High-Power Temperature-Stable Electrostatic RF MEMS Capacitive Switch Based on a Thermal Buckle-Beam Design
复制标题
DOI：
10.1109/jmems.2010.2049475
复制
发表时间：
2010-08-01
影响因子：
2.7
通讯作者：
Rebeiz, Gabriel M.
中科院分区：
文献类型：
--
作者：
Mahameed, Rashed;Rebeiz, Gabriel M.
本文介绍了一种新型的垂直静电RF MEMS开关的设计，制造和测量，它利用横向热屈曲梁致动器的设计，以降低开关的热应力的敏感性。考虑了双轴和应力梯度的影响，屈曲梁设计对这些应力的敏感性最小。几个开关与4，8和12个悬梁。所有开关都表现出对温度的低敏感性，并且吸合电压的变化在25-125摄氏度之间类似于-50 mV/摄氏度。在相同温度范围内，上升状态电容的变化< +/-3%。该开关还表现出优异的RF和机械性能，并且报道了在10 GHz的上态位置的电容比接近20-23（C-u = 85-115 fF，C-d = 1.7-2.6 pF），Q > 150。机械谐振频率和品质因数分别为f（o）= 60-160 kHz和Q（m）= 2.3-4.5。测量的切换和释放时间分别类似于2-5 μ s和类似于5-6.5 μ s。功率处理测量显示出良好的稳定性，在10 GHz的入射功率为4 W。[2009-0319]
This paper presents the design, fabrication and measurements of a novel vertical electrostatic RF MEMS switch which utilizes the lateral thermal buckle-beam actuator design in order to reduce the switch sensitivity to thermal stresses. The effect of biaxial and stress gradients are taken into consideration, and the buckle-beam designs show minimal sensitivity to these stresses. Several switches with 4, 8, and 12 suspension beams are presented. All the switches demonstrate a low sensitivity to temperature, and the variation in the pull-in voltage is similar to -50 mV/degrees C from 25-125 degrees C. The change in the up-state capacitance for the same temperature range is < +/- 3%. The switches also exhibit excellent RF and mechanical performances, and a capacitance ratio of similar to 20-23 (C-u = 85-115 fF, C-d = 1.7-2.6 pF) with Q > 150 at 10 GHz in the up-state position is reported. The mechanical resonant frequencies and quality factors are f(o) = 60-160 kHz and Q(m) = 2.3-4.5, respectively. The measured switching and release times are similar to 2-5 mu s and similar to 5-6.5 mu s, respectively. Power handling measurements show good stability with similar to 4W of incident power at 10 GHz. [2009-0319]