Reduction of line edge roughness in the top surface imaging process
Reduction of line edge roughness in the top surface imaging process
复制标题
减少顶面成像过程中的线边缘粗糙度
DOI：
10.1116/1.590409
复制
发表时间：
1998
影响因子：
1.4
通讯作者：
M. Sasago
中科院分区：
文献类型：
--
作者：
S. Mori;T. Morisawa;Nobuyuki N. Matsuzawa;Y. Kaimoto;M. Endo;T. Matsuo;K. Kuhara;M. Sasago
本文提出了一种新颖的顶面成像（TSI）工艺，该工艺具有高灵敏度并降低了线边缘粗糙度（LER）。我们发现，LER和残留物减少时，我们使用的化学放大（CA）抗蚀剂，由一个高分子量的基础聚合物和光产酸剂产生的酸具有高分子量。CA抗蚀剂上的曝光区域的顶部薄甲硅烷基化层引起LER。干式显影工艺中的突破步骤改善了曝光区域和未曝光区域之间的甲硅烷基化对比度。然后，我们应用一个新的步骤，在干开发过程中，其中包括一个预干燥的发展烘烤在一个温度以上的甲硅烷基化的聚合物的玻璃化转变温度。该步骤在通过热流使甲硅烷基化层的边缘卷曲和平滑方面是有效的。通过在玻璃化转变温度以上应用预干燥显影烘烤步骤，我们能够将LER降低到小于6nm。我们已经证明了一种新的TSI方法，用于实现高灵敏度和改进的LER。
This article presents a novel top surface imaging (TSI) process that is highly sensitive and reduces line edge roughness (LER). We found that LER and residue decreased when we used a chemically amplified (CA) resist, consisting of a base polymer with a high molecular weight and a photo-acid generator producing an acid with a high molecular weight. The top thin silylated layer of the exposed region on the CA resist causes the LER. A breakthrough step in the dry-development process improves the silylation contrast between the exposed and unexposed regions. We then apply a novel step in the dry-development process which involves a predry development bake at a temperature above the glass transition temperature of the silylated polymer. This step is effective in rolling and smoothing the edge of silylated layer by thermal flow. By applying the predry-development bake step above the glass transition temperature, we were able to reduce the LER to less than 6 nm. We have demonstrated a novel TSI process for achieving highly sensitive and improved LER.