Low-temperature synthesis and electronic transport of topological insulator SmB6 nanowires
Low-temperature synthesis and electronic transport of topological insulator SmB6 nanowires
复制标题
拓扑绝缘体SmB6纳米线的低温合成及电子输运
DOI：
10.1039/c6ce01250g
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发表时间：
2016-01-01
期刊：
影响因子：
3.1
通讯作者：
Li, Qidong
中科院分区：
文献类型：
--
作者：
Han, Wei;Qiu, Yang;Li, Qidong
报道了一种在220-240 ℃低温下制备六硼化钐（SmB 6）纳米线的新方法。扫描电子显微镜（SEM）图像显示SmB 6纳米线的直径为50 ~ 120 nm，长度为1 ~ 8 μ m。透射电子显微镜（TEM）图像显示，SmB 6纳米线是单晶的，具有优选的[001]生长方向。电子输运表明，SmB 6纳米线具有6 K的高饱和温度和增强的表面导电。
We report a novel solid state method to prepare samarium hexaboride (SmB6) nanowires at low temperatures of 220-240 degrees C. Scanning electron microscopy (SEM) images show that the SmB6 nanowires have diameters from 50 to 120 nm and lengths from 1 to 8 mu m. Transmission electron microscopy (TEM) images reveal that the SmB6 nanowires are single crystalline with a preferred [001] growth direction. Electronic transport shows that a SmB6 nanowire has a high saturation temperature of 6 K and an enhanced surface conduction.