On the importance of radiative and Auger losses in GaN-based quantum wells
On the importance of radiative and Auger losses in GaN-based quantum wells
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DOI：
10.1063/1.2953543
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发表时间：
2008-06-30
影响因子：
4
通讯作者：
Lutgen, S.
中科院分区：
文献类型：
--
作者：
Hader, J.;Moloney, J. V.;Lutgen, S.
采用全微观多体模型研究了InGaN/GaN量子阱中辐射损耗和俄歇载流子损耗的重要性。与最近关于俄歇损失对实验观察到的效率下降的重要性的推测相反，我们发现俄歇损失可以忽略不计。与实验测量的阈值损失很好地吻合。结果表明，井中合金剖面的细节没有明显的依赖性。(c) 2008年美国物理研究所。
Fully microscopic many-body models are used to study the importance of radiative and Auger carrier losses in InGaN/GaN quantum wells. Auger losses are found to be negligible in contrast to recent speculations on their importance for the experimentally observed efficiency droop. Good agreement with experimentally measured threshold losses is demonstrated. The results show no significant dependence on details of the well alloy profile. (c) 2008 American Institute of Physics.