Tensile test of single crystal silicon film at elevated temperatures
Tensile test of single crystal silicon film at elevated temperatures
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单晶硅薄膜高温拉伸试验
DOI：
10.1109/mhs.2004.1421278
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
K. Sato
中科院分区：
文献类型：
--
作者：
S. Nakao;T. Ando;M. Shikida;K. Sato
开发了一种允许在高温下进行试验的拉伸试验系统。利用该系统对573 K下微尺度单晶硅薄膜的力学性能进行了测试。硅试样的表面取向为（100），拉伸方向为<110>。在573K下测得的平均杨氏模量和断裂应力分别为144GPa和5.19GPa。在室温下，杨氏模量和断裂应力分别为137 GPa和4.89 GPa。这些相似的值表明，与室温相比，单晶硅膜的机械性能在573 K下几乎没有变化。
A tensile-testing system that allows tests at elevated temperature was developed. Using this system, we evaluated the mechanical properties of micro-scale single-crystal silicon film at 573 K. The silicon test specimens had a surface orientation of (100), and a tensile direction of <110>, The average measured Young's modulus and fracture stress were 144 GPa and 5.19 GPa, respectively, at 573 K. At room temperature, Young's modulus and fracture stress were 137 GPa and 4.89 GPa. These similar values show that the mechanical properties of single-crystal silicon film hardly change at 573 K compared to room temperature.