Effect of Oxygen Component in Magneto-Active Microwave CH4/He Plasma on Large-Area Diamond Nucleation over Si
Effect of Oxygen Component in Magneto-Active Microwave CH4/He Plasma on Large-Area Diamond Nucleation over Si
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磁激活微波CH4/He等离子体中氧成分对Si上大面积金刚石成核的影响
DOI：
10.1143/jjap.38.4500
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发表时间：
1999
影响因子：
1.5
通讯作者：
T. Ito
中科院分区：
文献类型：
--
作者：
Hyeongmin Jeon;Chun;A. Hatta;T. Ito
采用磁激活微波等离子体化学气相沉积（CVD）技术，在低于10 Pa的低压下，对Si（100）衬底上大面积金刚石生长的成核增强预处理进行了研究。在这项研究中，用于预处理的CH 4/He等离子体中的最佳CO2组成主要针对10600 °C的低衬底温度的情况进行检查。在预处理之后，使用CH 4 [5 sccm]/CO 2 [10 sccm]/H2[85 sccm]气体混合物进行两小时的后续生长，导致在<100>以1- 2%的CO 2浓度预处理的Si衬底上具有高密度（109/cm 2）的金刚石颗粒的定向生长。另一方面，在高于这些的CO2浓度下，在预处理期间沉积的碳膜较不致密，并且在使用生长等离子体处理10分钟后几乎完全蚀刻掉。结果表明，当CO2的质量分数超过3.8%时，四极质谱、光发射谱和拉曼散射谱发生了明显的变化。
Nucleation-enhanced pretreatments have been studied for large-area diamond growth on Si (100) substrates using magneto-active microwave plasma chemical vapor deposition (CVD) at low pressures below 10 Pa. In this study, an optimal CO2 composition in the CH4/He plasma used for the pretreatment was mainly examined for the case of a low substrate temperature of ∼600°C. A two-hour subsequent growth using a CH4[5 sccm]/CO2[10 sccm]/H2[85 sccm] gas mixture after the pretreatment resulted in <100>-oriented growth of diamond Particles with a high density (∼109/cm2) on Si substrates pretreated at CO2 concentrations of 1–2%. On the other hand, at CO2 concentrations higher than these, the carbon films deposited during the pretreatment were less dense and were almost completely etched off after a 10-min treatment using the growth plasma. It was found that quadrupole mass spectra, optical emission spectra and Raman scattering spectra changed substantially when CO2 beyond 3.8% was added to the source gas.