Highly conductive epitaxial β-Ga2O3 and β-(Al x Ga1−x )2O3 films by MOCVD
Highly conductive epitaxial β-Ga2O3 and β-(Al x Ga1−x )2O3 films by MOCVD
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MOCVD 高导电外延 β-Ga2O3 和 β-(Al x Ga1−x )2O3 薄膜
DOI：
10.35848/1347-4065/ac8bbc
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发表时间：
2022
影响因子：
1.5
通讯作者：
A. Osinsky
中科院分区：
文献类型：
--
作者：
F. Alema;T. Itoh;Samuel Vogt;J. Speck;A. Osinsky
报道了用MOCVD方法外延生长高导电性简并Ge或Si掺杂的β-Ga_2O_3和β-(Al_xGa_1-−_x)_2O_3薄膜。用Si和Ge掺杂实现了记录电导分别为2523和1581 S cm−1的高导电性同质外延Ga2O3层。还制备了高导电性的掺硅β-(Alx Ga1−x)2O_3薄膜。随着Al含量的增加和膜层厚度的增加，Si的掺入减少。共格应变−-(Al_(0.12)Ga_(0.88))_2O_3的电导率达到612 S cmβ_(1)。
We report on the epitaxial growth of highly conductive degenerated Ge or Si doped β-Ga2O3 and β-(Al x Ga1−x )2O3 films by MOCVD. Highly conductive homoepitaxial β-Ga2O3 layers with record conductivities of 2523 and 1581 S cm−1 were realized using Si and Ge dopants. Highly conductive Si doped β-(Al x Ga1−x )2O3 films were also grown. The incorporation of Si decreased with the increase in Al content and layer thickness. Record high conductivity of 612 S cm−1 was attained for coherently strained β-(Al0.12Ga0.88)2O3.