Surface activated bonding of aluminum oxide films at room temperature
Surface activated bonding of aluminum oxide films at room temperature
复制标题
DOI：
10.1016/j.scriptamat.2020.09.005
复制
发表时间：
2021-01
影响因子：
6
通讯作者：
J. Utsumi;R. Takigawa
中科院分区：
文献类型：
--
作者：
J. Utsumi;R. Takigawa
我们研究了室温下短时激活条件下化学气相沉积沉积 Al2O3 薄膜的表面激活键合（SAB）。尽管Al2O3薄膜键合的表面能非常低，但Al2O3薄膜/蓝宝石键合的表面能约为1 Jm−2，蓝宝石/蓝宝石键合的表面能超过2 Jm−2。透射电子显微镜显示，在 Al2O3/Al2O3 键合界面处观察到约 1 nm 厚的非晶状中间层，但在 Al2O3/蓝宝石键合中未观察到，这表明 Al2O3 薄膜的结晶度影响 Al2O3 的键合。
We have investigated the surface activated bonding (SAB) of deposited Al2O3films by chemical vapor deposition under a short-time activated condition at room temperature. Although the surface energy for bonding of Al2O3films was very low, that of Al2O3film/sapphire bonding was approximately 1 Jm−2and more than 2 Jm−2for sapphire/sapphire bonding. Transmission electron microscopy showed an amorphous-like intermediate layer approximately 1 nm thick, observed at the bonding interface of Al2O3/Al2O3, but not in the bonding of Al2O3/sapphire, which suggests that the crystallinity of the Al2O3film affects the bonding of Al2O3.