Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films
Barrier-free subsurface incorporation of 3d metal atoms into Bi(111) films
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DOI：
10.1103/physrevb.91.195441
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发表时间：
2015-05
影响因子：
3.7
通讯作者：
C. Klein;N. J. Vollmers;U. Gerstmann;P. Zahl;D. Lükermann;G. Jnawali;H. Pfnür;C. Tegenkamp;P. Su
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文献类型：
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作者：
C. Klein;N. J. Vollmers;U. Gerstmann;P. Zahl;D. Lükermann;G. Jnawali;H. Pfnür;C. Tegenkamp;P. Su
通过结合扫描隧道显微镜与密度泛函理论，它表明，Bi（111）表面提供了一个明确的掺入网站在第一双层，陷阱高度协调的原子，如过渡金属（TM）或贵金属。所有沉积的原子假设完全相同的特定的七次协调的次表面间隙的网站，而表面形貌几乎保持不变。值得注意的是，3d TM显示出无障碍结合。所观察到的表面改性的无障碍亚吸附有助于抑制聚集在集群。因此，它不仅允许纯Bi（111）表面的电子性质的调谐，而且还可以观察到由衬底稳定的Bi双层形成的拓扑绝缘体。
By combining scanning tunneling microscopy with density functional theory it is shown that the Bi(111) surface provides a well-defined incorporation site in the first bilayer that traps highly coordinating atoms such as transition metals (TMs) or noble metals. All deposited atoms assume exactly the same specific sevenfold coordinated subsurface interstitial site while the surface topography remains nearly unchanged. Notably, 3d TMs show a barrier-free incorporation. The observed surface modification by barrier-free subsorption helps to suppress aggregation in clusters. Thus, it allows a tuning of the electronic properties not only for the pure Bi(111) surface, but may also be observed for topological insulators formed by substrate-stabilized Bi bilayers.