Electrical properties of undoped and Li-doped NiO thin films deposited by RF sputtering without intentional heating
Electrical properties of undoped and Li-doped NiO thin films deposited by RF sputtering without intentional heating
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DOI：
10.7567/jjap.55.088003
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发表时间：
2016-07
影响因子：
1.5
通讯作者：
M. Sugiyama;H. Nakai;Gaku Sugimoto;A. Yamada;S. Chichibu
中科院分区：
文献类型：
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作者：
M. Sugiyama;H. Nakai;Gaku Sugimoto;A. Yamada;S. Chichibu
研究了常规射频溅射法制备的未掺杂和锂掺杂NiO薄膜的基本透过率和电学性能。未掺杂和Li掺杂NiO的透过率和电阻率都随着溅射气体中O2含量的增加而降低，f(O2)=O2/(Ar+O2)。这主要归因于富氧生长条件下Ni空位受主浓度的增加。除VnI外，Ni位上的Li原子(LiNi)可能作为浅受主，这可以解释在相同f(O2)条件下，Li掺杂NiO的载流子浓度比未掺杂的NiO高约三个数量级的实验结果。NiO的迁移率非常低(约0.1cm2V−1 S−1)，几乎与f(O2)或掺杂量无关，反映了较大的空穴有效质量。
The fundamental transmittance and electrical properties of undoped and Li-doped NiO thin films deposited by conventional RF sputtering without intentional heating were evaluated. Both the transmittance and resistivity of undoped and Li-doped NiO decreased with increasing O2 fraction in the sputtering gas, f(O2) = O2/(Ar + O2). The result is attributed to the increase in the concentration of acceptors of Ni vacancies (VNi) under oxygen-rich growth conditions. In addition to VNi, Li atom on the Ni site (LiNi) likely acts as a shallow accepter, which can explain the experimental finding that the carrier concentration of Li-doped NiO was approximately three orders of magnitude higher than that of the undoped case deposited under the same f(O2). The mobility of NiO was remarkably low (around 0.1–1.0 cm2 V−1 s−1) and almost independent of f(O2) or the amount of doping, reflecting the large hole effective mass.