Carbon nanotube electronics
Carbon nanotube electronics
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DOI：
10.1016/s0301-0104(02)00376-2
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发表时间：
2002-08-01
期刊：
影响因子：
2.3
通讯作者：
Avouris, P
中科院分区：
文献类型：
--
作者：
Avouris, P
我们首先讨论了碳纳米管（CNTs）的一维（113）电子结构及其对金属CNTs中载流子散射机制的影响。然后，我们把注意力集中在半导体碳纳米管和基于碳纳米管的电子器件。我们首先讨论p型场效应晶体管（CNTF）的结构和功能。然后介绍了双极性碳纳米管薄膜的制备和性能。我们表明，除了掺杂施主原子，n型晶体管可以通过简单地退火的p-CNTF晶体管在真空中产生。后一过程在暴露于氧气时是可逆的。我们建议，通常发现的p-字符的制备的碳纳米管既不是一个固有的纳米管的属性，也不反映其掺杂，但在接触处的载流子注入的性质所决定的。产生p-和n-CNTF的能力使我们能够构建互补逻辑电路。我们目前的两个电压逆变器（“非门”），分子间和分子内的结果。在后者中，逻辑函数沿着单个CNT或CNT束的长度沿着编码。最后，我们专注于复合CNT系统中的电子特性和器件制造，即，多壁（MW）和单壁（SW）CNT束。我们讨论了这些材料中的电流诱导击穿过程，并将其用于：（a）拆开壳-壳多壁碳纳米管，并对每个壳进行电学表征，（B）开发“建设性破坏”过程，该过程允许从单壁碳纳米管束中制造CNTF阵列，而无需首先将金属性纳米管与半导体纳米管分离。(C)2002 Elsevier Science B. V.保留所有权利。
We first discuss the one-dimensional (113) electronic structure of carbon nanotubes (CNTs) and its influence on the carrier scattering mechanisms in metallic CNTs. We then focus our attention on semiconducting CNTs and CNT-based electronic devices. We start by discussing the structure and function of p-type field-effect transistors (CNTFETs). Then the preparation and properties of ambipolar CNTFETs is described. We show that in addition to doping with donor atoms, n-type transistors can be generated by simply annealing the p-CNTFETs in vacuum. The latter process is reversible upon oxygen exposure. We propose that the commonly found p-character of the as-prepared CNTs is neither an intrinsic nanotube property nor does it reflect their doping, but is determined by the nature of carrier injection at the contacts. The ability to generate both p- and n-CNTFETs allows us to build complementary logic circuits. We present results on two voltage inverters ("NOT gates"), an intermolecular one and an intramolecular one. In the latter, the logic function is encoded along the length of a,single CNT or CNT bundle.Finally, we focus on the electronic properties and device fabrication in composite CNT systems, i.e., multi-walled (MW) and single-walled (SW) CNT bundles. We discuss the current-induced breakdown process in these materials and use it to: (a) take apart shell-by-shell MWCNTs and electrically characterize each shell, (b) develop the process of "constructive destruction" which allows the fabrication of arrays of CNTFETs out of bundles of SWCNTs without the need to first separate metallic from semiconducting nanotubes. (C) 2002 Elsevier Science B.V. All rights reserved.