Multiferroic properties of sputtered BiFeO3 thin films
Multiferroic properties of sputtered BiFeO3 thin films
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DOI：
10.1063/1.2901871
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发表时间：
2008-04
影响因子：
4
通讯作者：
Yibin Li;T. Sritharan;Sam Zhang;Xiaodong He;Yang Liu;Tupei Chen
中科院分区：
文献类型：
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作者：
Yibin Li;T. Sritharan;Sam Zhang;Xiaodong He;Yang Liu;Tupei Chen
采用溅射法在Pt / Ti / SiO2 / Si衬底上沉积BiFeO3薄膜。在退火状态下，它被证实为具有四方晶体结构的多晶薄膜。Fe2+和Fe3+离子在薄膜中同时存在。在120kV∕cm时，漏电流密度低至10−3A∕cm2。该溅射膜具有多铁性，在室温下具有37μC∕cm2的饱和铁电环和21 μ c∕cm3的饱和铁磁环。
A cosputtering method was used to deposit BiFeO3 thin films on Pt∕Ti∕SiO2∕Si substrates. It was confirmed as a polycrystalline film with a tetragonal crystal structure in the annealed state. Both Fe2+ and Fe3+ ions were found to coexist in the film. The leakage current density is as low as 10−3A∕cm2 at 120kV∕cm. This sputtered film shows multiferroic properties exhibiting a saturated ferroelectric loop with a large remnant polarization of 37μC∕cm2 and a saturated ferromagnetic loop with saturation magnetization of 21emu∕cm3 at room temperature.