Single Event Upset: An Embedded Tutorial
Single Event Upset: An Embedded Tutorial
复制标题
单事件翻转：嵌入式教程
DOI：
10.1109/vlsi.2008.28
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发表时间：
2008
期刊：
影响因子：
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通讯作者：
V. Agrawal
中科院分区：
文献类型：
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作者：
Fan Wang;V. Agrawal
随着CMOS技术的不断缩小，可靠性已成为下一代系统发展的主要瓶颈。诸如晶体管小型化、新材料的使用和片上系统架构等技术趋势继续增加系统对软错误的敏感性。这些错误是随机的，与永久性硬件故障无关。它们的原因可能是内部的（例如，互连耦合）或外部的（例如，宇宙辐射）。为了满足系统的可靠性要求，电路设计人员和测试工程师都有必要了解软误差的基本知识。本文介绍了由外部辐射引起的单事件扰动现象，这是软误差的主要来源。我们总结了硅的基本辐射机制和由此产生的软误差。介绍了具有时间和空间冗余的软误差缓解技术。一个工业设计的例子，IBM z990系统，展示了当今工业是如何处理软错误的。
With the continuous downscaling of CMOS technologies, the reliability has become a major bottleneck in the evolution of the next generation systems. Technology trends such as transistor down-sizing, use of new materials, and system on chip architectures continue to increase the sensitivity of systems to soft errors. These errors are random and not related to permanent hardware faults. Their causes may be internal (e.g., interconnect coupling) or external (e.g., cosmic radiation). To meet the system reliability requirements it is necessary for both the circuit designers and test engineers to get the basic knowledge of the soft errors. We present a tutorial study of the radiation-induced single event upset phenomenon caused by external radiation, which is a major source of soft errors. We summarize basic radiation mechanisms and the resulting soft errors in silicon. Soft error mitigation techniques with time and space redundancy are illustrated. An industrial design example, the IBM z990 system, shows how the industry is dealing with soft errors these days.