Solid phase epitaxy of stressed and stress‐relaxed Ge‐Si alloys
Solid phase epitaxy of stressed and stress‐relaxed Ge‐Si alloys
复制标题
应力和应力松弛Ge-Si合金的固相外延
DOI：
10.1063/1.351212
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发表时间：
1992
影响因子：
3.2
通讯作者：
S. Lau
中科院分区：
文献类型：
--
作者：
Q. Hong;J. Zhu;J. Mayer;W. Xia;S. Lau
研究了在（100）Si衬底上固相外延生长3500埃厚的GexSi 1 −x（0.04≤x≤0.12）薄膜。在475-575 °C范围内，再生长层的厚度随退火时间线性增加。应力合金的再生长速率小于纯Si的再生长速率，而应力松弛合金的再生长速率大于Si。再生率的差异由激活应变张量模型解释（Aziz，Sabin和Lu，将发表在Phys. Rev. B）。实验中得到的激活应变张量的第一个元素与Aziz等人推导的结果非常一致。对于低Ge浓度（x<0.08），再结晶区具有良好的结晶质量。然而，观察到螺纹位错在应力Ge 0.1Si 0.9合金完全再结晶后。在550 °C下的再生长期间，Ge-Si合金首先相干地再生长至300 A，高于300 A，螺纹位错开始成核。另一方面，没有发现位错。
Solid phase epitaxy of 3500‐A‐thick GexSi1−x (0.04≤x≤0.12) films on (100) Si substrates has been investigated. The thickness of regrown layers increased linearly with annealing time in the temperature range of 475–575 °C. The regrowth rates of stressed alloys were less than those of pure Si, while stress‐relaxed alloys have larger rates than Si. The difference in regrowth rates was explained by the activation‐strain tensor model (Aziz, Sabin, and Lu, to be published in Phys. Rev. B). The first element of the activation‐strain tensor obtained in this experiment was in excellent agreement with that deduced by Aziz et al. For low Ge concentrations (x<0.08), the recrystallized region was of good crystalline quality. However, threading dislocations were observed in a stressed Ge0.1Si0.9 alloy after complete recrystallization. During the regrowth at 550 °C, the Ge‐Si alloy first regrew coherently up to 300 A, above which threading dislocations started to nucleate. On the other hand, no dislocations were detecte...