Magnetic properties and domain structures of FeSiB thin films prepared by RF-sputtering method
Magnetic properties and domain structures of FeSiB thin films prepared by RF-sputtering method
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射频溅射法制备FeSiB薄膜的磁性能和磁畴结构
DOI：
10.1016/j.jmmm.2003.12.764
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
H. Akinaga
中科院分区：
文献类型：
--
作者：
Z. Sun;H. Kuramochi;M. Mizuguchi;F. Takano;Yasuyuki Semba;H. Akinaga
用射频溅射法在0.59nm/min的沉积速率下制备了平整的Fe_（78）Si_（10）B_（12）薄膜，薄膜不是完全非晶，而是α-Fe（Si）纳米晶镶嵌在非晶基体中。在沉积态薄膜中观察到涟漪畴结构。在真空度为4.5×10 - 5 Pa的540°C下退火1h后，观察到致密的条状畴，其特征是畴宽非常窄，仅为80 nm。(110)退火过程中α-Fe（Si）纳米晶的织构和岛状结构是导致垂直各向异性的主要原因。
Smooth Fe78Si10B12thin films were prepared by RF sputtering with a very slow deposition rate of 0.59nm/min. The as-deposited films are not fully amorphous, instead α-Fe(Si) nanocrystallites are found to embed in the amorphous matrix. Ripple domain structures are observed in the as-deposited film. After annealing at 540°C for 1h in an ultrahigh vacuum (4.5×10−5Pa), dense stripe domains are observed, characterized by a very narrow domain width of 80nm. (110) texture and island-like configuration of α-Fe(Si) nanocrystallites during annealing treatment are responsible for the perpendicular anisotropy.