Spectroscopic diagnostic of an argon–hydrogen RF inductive thermal plasma torch at atmospheric pressure used for silicon hydrogenation
Spectroscopic diagnostic of an argon–hydrogen RF inductive thermal plasma torch at atmospheric pressure used for silicon hydrogenation
复制标题
用于硅氢化的大气压下氩-氢射频感应热等离子体炬的光谱诊断
DOI:
10.1088/0022-3727/35/18/309
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发表时间:
2002
期刊:
影响因子:
--
通讯作者:
J. Chapelle
中科院分区:
文献类型:
--
作者:
F. Bourg;S. Pellerin;D. Morvan;J. Amouroux;J. Chapelle
Hydrogenation of silicon materials has great advantages for its photovoltaic properties and is the key to elimination of crystalline defects during basaltic growth of the crystal. It is therefore interesting to characterize the plasma by optical emission spectroscopy methods in order to study hydrogenation of silicon particles during their treatment by an inductive thermal plasma burning in the Ar–H2 mixture. Excited states of atomic hydrogen n' = 3–8, which are responsible for silicon hydrogenation, have been detected by the optical emission spectroscopy of the Balmer series lines. These hydrogen lines have been used to determine electronic density on the plasma axis. Furthermore, Ar I lines were used to estimate the electronic temperature by the Boltzmann plot method. The deviation from the local thermodynamic equilibrium of the plasma has also been estimated.