Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications
Photoluminescence properties of dilute nitride InNAs/InGaAs/InP multi-quantum wells for mid-infrared applications
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用于中红外应用的稀氮化物InNAs/InGaAs/InP多量子阱的光致发光特性
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
H. Lin
中科院分区：
文献类型：
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作者：
H.D. Sun;A. Clark;S. Calvez;M. Dawson;D. Shih;H. Lin
报道了InP衬底上不同N含量的InNAs/InGaAs多量子威尔斯阱的光致发光特性。这些量子阱的发射波长可以通过N含量进行有效的调谐。然而，弯曲效应弱于GaNAs和GaInNAs。这些异质结构的光学性质与势垒和量子阱之间的界面质量密切相关，而界面质量又受到N含量的影响。阐明了N在该物质体系中的两种作用。一方面，在InAs基体中掺入N有利于降低带隙和晶格常数。另一方面，随着N含量的增加，PL效率显著增加。通过在这两种效应之间进行权衡，可以实现优化的设计和生长。
We report the photoluminescence characterization of a series InNAs/InGaAs multi-quantum wells (MQWs) of various N content on InP substrates. The emission wavelength of these QWs can be tuned effectively by N content. However, the bowing effect is weaker than in GaNAs and GaInNAs. The optical properties of these hetero-structures are closely related to quality of the interface between the barriers and the QWs which is influenced by N content. Two effects of N in this material system have been clarified. On the one hand, the incorporation of N into InAs matrix is beneficial as far as the reduction of band-gap and the lattice constant are concerned. On the other hand, the PL efficiency increases dramatically with the increase of N content. Optimized design and growth could be achieved by trading off between these two effects.