Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures
Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures
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F 离子注入隔离 AlGaN/GaN 异质结构的热稳定性
DOI：
10.1007/s11433-018-9312-7
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发表时间：
2018
期刊：
影响因子：
--
通讯作者：
Zhang Jicai
中科院分区：
文献类型：
--
作者：
Tan Shuxin;Deng Xuguang;Zhang Boshun;Zhang Jicai
研究了F离子注入隔离AlGaN/GaN异质结构的热稳定性，并与B离子注入隔离进行了比较。注入F离子的样品的方块电阻比注入B离子的样品的方块电阻低，这是由于增强了跳跃导电。两个注入样品的漏电流最初下降，然后增加后退火温度的增加，表明损伤诱导的隔离机制。在400°C退火后，漏电流达到最小值，比生长态结构的饱和电流（Isat）低108倍以上，表明成功的隔离。在相对高温退火后，F注入的漏电流变化不大，而B注入的漏电流显著增加，表明F注入的隔离层具有良好的热稳定性。在300°C下测量的F离子注入的漏电流比生长结构的Isat低103倍，表明F离子隔离适用于高达300°C。高阻GaN层与F或B离子注入样品之间的电流和激活能（Ea）的差异表明，漏电流源自高阻GaN层上方的区域。实验结果表明，最佳导电贡献态随工作温度、退火温度和离子种类的变化而变化。
The thermal stability of F ion-implanted isolated AlGaN/GaN heterostructures was investigated, with B ion-implanted isolation shown for comparison. The sheet resistance of as-implanted samples with F ions was lower than that with B ions due to enhanced hopping conduction. The leakage current for both implanted samples initially decreased and then increased with increases in post-annealing temperature, indicating a damage-induced isolation mechanism. Leakage reached a minimum value after 400°C annealing, which was over 108times lower than the saturated current (Isat) of the as-grown structure, suggesting a successful isolation. After relatively high-temperature annealing, the leakage for F implantation showed a small change, whereas that for B implantation showed significant increase, suggesting that F-implanted isolation exhibited excellent thermal stability. Leakage current measured at 300°C for F ion-implantation was 103times lower than theIsatof the as-grown structure, demonstrating that F ion isolation was applicable up to 300°C. Differences in current and activation energy (Ea) between the high-resistance GaN layer and F or B ion-implanted samples indicated that the leakage current originated from the region above the high-resistance GaN layer. Variation inEarevealed that the optimal contributing states for conduction changed with operating temperature, annealing temperature, and ion species.