Charge transfer and doping at organic/organic interfaces

Charge transfer and doping at organic/organic interfaces
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有机/有机界面的电荷转移和掺杂

DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
J. Fink
J. Fink
中科院分区：
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文献类型：
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作者：
H. Peisert;M. Knupfer;Fapei Zhang;A. Petr;L. Dunsch;J. Fink

文献摘要

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我们研究了技术相关的有机/有机界面的电子性质，使用光电子能谱。将酞菁类有机半导体的代表蒸发到PEDOT：PSS [聚-3，4-亚乙二氧基噻吩和聚苯乙烯磺酸盐的混合物]薄膜上，该薄膜通常用作有机半导体器件中的电极材料。除了形成的界面偶极子，我们观察到的半导体，这是解释由掺杂的有机半导体附近的界面，由于在界面区域内的两种有机材料的混合的电子能级的能量转移。
We studied the electronic properties of technically relevant organic/organic interfaces using photoemission spectroscopy. Representatives of organic semiconductors from the family of the phthalocyanines were evaporated onto PEDOT:PSS [mixture of poly-3,4-ethylenedioxy-thiophene and polystyrenesulfonate] thin films, which are often applied as electrode material in organic semiconductor devices. Besides the formation of interface dipoles we observe energetic shifts of the electronic levels of the semiconductors, which are explained by a doping of the organic semiconductor near the interface due to a mixing of the two organic materials within the interface region.