Low-Lying Electronic States in Bismuth Trimer Bi3 as Revealed by Laser Induced NIR Emission Spectroscopy in Solid Ne
Low-Lying Electronic States in Bismuth Trimer Bi3 as Revealed by Laser Induced NIR Emission Spectroscopy in Solid Ne
复制标题
固体氖中激光诱导近红外发射光谱揭示铋三聚体 Bi3 中的低电子态
DOI:
10.1021/jp509714f
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发表时间:
2014
期刊:
影响因子:
--
通讯作者:
K.Kawaguchi
中科院分区:
文献类型:
--
作者:
T.Wakabayashi;Y.Wada;K.Nakajima;Y.Morisawa;S.Kuma;Y.Miyamoto;N.Sasao;M.Yoshimura;T.Sato;K.Kawaguchi
Laser-induced near-infrared (NIR) emission spectra of neutral bismuth timer, Bi3, embedded in solid neon matrixes at 3 K were recorded in a range 870–1670 nm. Using photoexcitation with low energy photons at 1064 nm, two emission band systems were newly identified by their origin bands atT0= 6600 and 8470 cm–1. Accordingly, spectral assignment for three NIR emission band systems reported recently was partly revised for the one with its origin band atT0= 7755 cm–1and reconfirmed for the others atT0= 9625 and 11 395 cm–1. Energy splitting by spin–orbit coupling between the pair of electronic energy levels in the ground state of bismuth trimer, Bi3, both having a totally symmetric vibrational mode of frequency at ωe″= 150 cm–1, was determined to be 1870 ± 1.5 cm–1. Transitions from the pair of electronically excited states, locating atT0= 8470 and 9625 cm–1above the ground state and separated by spin–orbit coupling of 1155 cm–1, have relatively long decay constants of τ ∼0.2 and ∼0.1 ms, respectively.