Direct observation of trap-assisted recombination in organic photovoltaic devices.
Direct observation of trap-assisted recombination in organic photovoltaic devices.
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DOI：
10.1038/s41467-021-23870-x
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发表时间：
2021-06-14
影响因子：
16.6
通讯作者：
Armin A
中科院分区：
文献类型：
--
作者：
Zeiske S;Sandberg OJ;Zarrabi N;Li W;Meredith P;Armin A
Trap-assisted recombination caused by localised sub-gap states is one of the most important first-order loss mechanism limiting the power-conversion efficiency of all solar cells. The presence and relevance of trap-assisted recombination in organic photovoltaic devices is still a matter of some considerable ambiguity and debate, hindering the field as it seeks to deliver ever higher efficiencies and ultimately a viable new solar photovoltaic technology. In this work, we show that trap-assisted recombination loss of photocurrent is universally present under operational conditions in a wide variety of organic solar cell materials including the new non-fullerene electron acceptor systems currently breaking all efficiency records. The trap-assisted recombination is found to be induced by states lying 0.35-0.6 eV below the transport edge, acting as deep trap states at light intensities equivalent to 1 sun. Apart from limiting the photocurrent, we show that the associated trap-assisted recombination via these comparatively deep traps is also responsible for ideality factors between 1 and 2, shedding further light on another open and important question as to the fundamental working principles of organic solar cells. Our results also provide insights for avoiding trap-induced losses in related indoor photovoltaic and photodetector applications. Trap-assisted recombination caused by localised sub-gap states is one of the factors limiting power-conversion efficiency in solar cells, yet the presence and relevance is still under debate in organic solar cells. Here, the authors reveal that this recombination loss is universally present under operational conditions in these devices.
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影响因子：
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作者：
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通讯作者：
Blom, P. W. M.
影响因子：
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作者：
Kaiser, Christina;Zeiske, Stefan;Armin, Ardalan
通讯作者：
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通讯作者：
Armin, Ardalan
影响因子：
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Street, R. A.
通讯作者：
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