The compensation role of deep defects in the electric properties of lightly Si-doped GaN
The compensation role of deep defects in the electric properties of lightly Si-doped GaN
复制标题
深部缺陷对轻掺杂GaN电性能的补偿作用
DOI：
10.1016/j.jallcom.2018.09.333
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发表时间：
2019
影响因子：
6.2
通讯作者：
Li M
中科院分区：
文献类型：
--
作者：
Liu S T;Yang J;Zhao D G;Jiang D S;Liang F;Chen P;Zhu J J;Liu Z S;Liu W;Xing Y;Zhang L Q;Li M
在这项工作中，我们研究了轻硅掺杂GaN层中缺陷的补偿效应。研究发现，增加GaN层中Si的掺杂浓度和位错密度可以增强对缺陷的补偿。随后通过理论分析发现，增加Si掺杂激活了更有效的补偿，这主要是由于深缺陷在补偿作用中的增强效应，而不是由于深缺陷密度的增加。同时发现，轻掺Si的GaN样品的黄光发光强度随Si掺杂浓度的增加而增加，这也可能是由于深能级缺陷的补偿增强所致，而带边发光峰值强度随Si掺杂浓度的增加而增加主要是由于自由载流子的增加所致。
In this work, we have investigated the compensation effect of defects in lightly Si-doped GaN layer. It is found that the compensation of defects can be enhanced by increasing Si doping concentration and dislocation density in GaN layer. Subsequently, through theoretical analysis it is found that a more effective compensation is activated by increasing Si doping, which is mainly due to the enhanced effect of deep defects in the compensation role rather than by the increase of density of deep defects. Meanwhile, it is found that the yellow luminescence (YL) intensity of lightly Si-doped GaN samples increases with the increasing Si doping concentration, which can also be caused by the enhancement of compensation of deep level defects, while the increase of peak intensity of band edge luminescence with increasing Si doping is mainly caused by the increase of free carriers.