Laser writing of individual nitrogen-vacancy defects in diamond with near-unity yield
Laser writing of individual nitrogen-vacancy defects in diamond with near-unity yield
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DOI：
10.1364/optica.6.000662
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发表时间：
2019-05-20
期刊：
影响因子：
10.4
通讯作者：
Smith, Jason M.
中科院分区：
文献类型：
--
作者：
Chen, Yu-Chen;Griffiths, Benjamin;Smith, Jason M.
宽带隙材料中的原子缺陷，如金刚石中的氮空位（NV）色心，对新一代量子信息技术的发展显示出相当大的前景，但由于无法以可控的方式产生和设计缺陷，进展受到阻碍。在这里，我们展示了一种全光学方法，用于在选定的位置以高定位精度确定性地写入单个NV中心。超短脉冲激光处理用于通过局部退火在晶体内部产生和扩散缺陷。在激光退火过程中，一旦检测到NV形成，在线荧光反馈提供停止处理的触发。这种方法为量子技术工程材料和器件的光学制造提供了新的工具。
Atomic defects in wide-bandgap materials, such as the nitrogen-vacancy (NV) color center in diamond, show considerable promise for the development of a new generation of quantum information technologies, but progress has been hampered by the inability to produce and engineer the defects in a controlled manner. Here, we demonstrate an all-optical method for the deterministic writing of individual NV centers at selected locations with high positioning accuracy. Ultrashort pulse laser processing is used to both create and diffuse defects inside the crystal through local annealing. During the laser-annealing process, online fluorescence feedback provides a trigger to stop processing once the NV formation is detected. This method provides a new tool for the optical fabrication of engineered materials and devices for quantum technologies.