Fabrication of ZnO Films Alloyed with LiGaO2 by RF-Magnetron Sputtering and Their Optical Property
Fabrication of ZnO Films Alloyed with LiGaO2 by RF-Magnetron Sputtering and Their Optical Property
复制标题
射频磁控溅射法制备LiGaO2合金ZnO薄膜及其光学性能
DOI：
10.1143/jjap.50.031102
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
S. Otsuka-Yao-Matsuo
中科院分区：
文献类型：
--
作者：
T. Omata;K. Tanaka;S. Otsuka-Yao-Matsuo
采用粉末x射线衍射（XRD）、透射电镜（TEM-SAD）和拉曼光谱分析了伪二元LiGaO 2 - ZnO体系中出现的相，重点研究了0.5 (LiGaO 2) 1/2·0.5 ZnO的组成。在该体系中发现了一种新的第四纪纤锌矿衍生的zn2 ligao4相。TEM-SAD表明相位具有不相称调制的顺序。通过漫反射光谱和光致发光光谱确定zn2 LiGaO 4的光能带隙为~ 4.0 eV；表明zn2是一种直接半导体材料。
The phase that appeared in the pseudo-binary LiGaO 2–ZnO system was investigated by powder X-ray diffraction (XRD), selected area electron diffraction by transmission electron microscopy (TEM-SAD) and Raman spectroscopy, especially focusing on the 0.5 (LiGaO 2) 1/2· 0.5 ZnO composition. A new quaternary wurtzite-derived Zn 2 LiGaO 4 phase was found in this system. The TEM-SAD indicated that the phase possesses an incommensurately modulated ordering. The optical energy band gap of Zn 2 LiGaO 4 was determined to be∼ 4.0 eV from its diffuse reflectance and photoluminescence spectra; and it was suggested that the Zn 2 LiGaO 4 was a direct semiconductor.