Heat Treatment with High-Pressure H2O Vapor of Pulsed Laser Crystallized Silicon Films
Heat Treatment with High-Pressure H2O Vapor of Pulsed Laser Crystallized Silicon Films
复制标题
脉冲激光晶化硅薄膜的高压水蒸气热处理
DOI：
10.1143/jjap.39.3883
复制
发表时间：
2000
影响因子：
1.5
通讯作者：
S. Higashi
中科院分区：
文献类型：
--
作者：
K. Asada;K. Sakamoto;Tadashi Watanabe;T. Sameshima;S. Higashi
本文讨论了高压水蒸汽热处理轻掺磷脉冲激光晶化硅薄膜时载流子的产生和缺陷的减少。给出了局域缺陷态密度降低引起的电导率变化。据报道，非掺杂薄膜的自旋密度也降低了。我们还用统计热力学计算程序讨论了多晶薄膜的电导率。2.实验性
In this paper, we discuss the carrier generation and reduction of defects for lightly phosphorus-doped pulsed laser crystallized silicon films by heat treatment with high-pressure H2O vapor. Change in the electrical conductivity caused by reduction of the density of localized defect states is presented. Reduction of the spin density is also reported for undoped films. We also discuss the electrical conductivity of the polycrystalline films using a statistical thermodynamical calculation program. 2. Experimental