Reduction of reflection losses in ZnGeP2 using motheye antireflection surface relief structures
Reduction of reflection losses in ZnGeP2 using motheye antireflection surface relief structures
复制标题
DOI：
10.1063/1.1466519
复制
发表时间：
2002-04-01
影响因子：
4
通讯作者：
Goldstein, J
中科院分区：
文献类型：
--
作者：
Aydin, C;Zaslavsky, A;Goldstein, J
我们报道了通过在衬底上利用亚波长膜表面图案在衬底上制造减反射(AR)结构来降低磷化锗锌(ZGeP2，或ZGP)晶体的表面反射损耗。Motheye AR图案的工作原理是在空气和三元非线性晶体之间创建一个有效折射率逐渐变化的区域。利用干涉光刻和反应离子刻蚀在SiCl4等离子体中创建了Motheye结构。当截止波长为3.8微米(接近理论上的最大值73%)时，在输出表面有母眼图案的ZGP晶体的透过率达到了类似于67%的透过率，而来自母眼腐蚀过程的表面污染可以忽略不计。母眼图案化技术可以应用于其他非线性晶体，其中表面反射损失是一个令人担忧的问题。(C)2002年美国物理研究所。
We report the reduction of surface reflection losses in zinc germanium phosphide (ZnGeP2, or ZGP) crystals by fabricating an antireflection (AR) structure in the substrate itself using subwavelength motheye surface patterns. The motheye AR patterning works by creating a region of gradually varying effective refractive index between air and the ternary nonlinear crystal. Motheye structures were created using interference lithography and reactive-ion etching in a SiCl4 plasma. The ZGP crystal with motheye patterning on the output surface reached a transmittance of similar to67% at a cutoff wavelength of 3.8 mum (close to the theoretical maximum of 73%), with negligible surface contamination from the motheye etching process. The motheye patterning technique could be applied to other nonlinear crystals where surface reflection losses are a concern. (C) 2002 American Institute of Physics.