Defect-Induced Magnetism in Neutron Irradiated 6H-SiC Single Crystals
Defect-Induced Magnetism in Neutron Irradiated 6H-SiC Single Crystals
复制标题
中子辐照 6H-SiC 单晶中的缺陷诱发磁性
DOI：
10.1103/physrevlett.106.087205
复制
发表时间：
2011-02-24
影响因子：
8.6
通讯作者：
Chen, Xiaolong
中科院分区：
文献类型：
--
作者：
Liu, Yu;Wang, Gang;Chen, Xiaolong
首次在中子辐照SiC单晶中观察到缺陷感生磁性。我们表明，故意创造的缺陷占主导地位的双空位（VSiVC）是负责所观察到的磁性。第一性原理计算表明，缺陷态有利于局域矩的形成，而缺陷波函数的扩展尾使长程自旋耦合成为可能。我们的结果证实了缺陷诱导磁性的存在，这意味着通过缺陷工程来调节宽带隙半导体的磁性的可能性。
Defect-induced magnetism is firstly observed in neutron irradiated SiC single crystals. We demonstrated that the intentionally created defects dominated by divacancies (VSiVC) are responsible for the observed magnetism. First-principles calculations revealed that defect states favor the formation of local moments and the extended tails of defect wave functions make long-range spin couplings possible. Our results confirm the existence of defect-induced magnetism, implying the possibility of tuning the magnetism of wide band-gap semiconductors by defect engineering.