Simulation of Radiation Damage in Solids
Simulation of Radiation Damage in Solids
复制标题
固体中的辐射损伤模拟
DOI：
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发表时间：
1981
影响因子：
1.8
通讯作者：
R. B. Irwin
中科院分区：
文献类型：
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作者：
S. Wood;N. Doyle;J. Spitznagel;W. J. Choyke;R. More;J. McGruer;R. B. Irwin
提出了硅中初级反冲光谱效应或辐射损伤的综合理论和实验研究。计算确定了如何通过快速碰撞将损伤能量划分为自由缺陷和级联。该理论还表明，在时间尺度上大约为 10-14 秒。预计晶格损伤的质量依赖性非常弱。然后在注入1.0 MeV 20Ne、0.5 MeV 4He和75 keV 1H的<111>单晶硅上进行沟道实验。离子的能量和注量是匹配的，使得在最初的 0.3 µm 内，所有物质沉积的损伤能量和能量沉积速率都相同。分析实验数据时假设等效的初级损伤状态将在高能量密度下演变成统计上等效的最终损伤状态。他们证实最终的损害基本上与轰击离子的质量无关。
A combined theoretical and experimental study of primary recoil spectra effects or radiation damage in silicon is presented. Calculations determined how the damage energy is partitioned into free defects and cascades by fast collisions. The theory also showed that on a time scale ~10-14 sec. a very weak mass dependence of the lattice damage is to be expected. Channeling experiments were then performed on <111> single crystal silicon implanted with 1.0 MeV 20Ne, 0.5 MeV 4He and 75 keV 1H. Energies and fluences of the ions were matched such that over the first 0.3 ¿m the damage energy deposited and the rate of energy deposition were the same for all species. The experimental data were analyzed assuming that equivalent primary damage states will evolve into statistically equivalent final damage states at high fluences. They confirm that the final damage is essentially independent of the mass of the bombarding ion.