Qubit compatible superconducting interconnects
Qubit compatible superconducting interconnects
复制标题
DOI：
10.1088/2058-9565/aa94fc
复制
发表时间：
2018-01-01
影响因子：
6.7
通讯作者：
Martinis, John M.
中科院分区：
文献类型：
--
作者：
Foxen, B.;Mutus, J. Y.;Martinis, John M.
我们提出了一种与超导量子比特技术兼容的全超导互连的制造工艺。这些互连允许量子电路的三维集成，而不引入有损非晶介电常数。它们由几微米高的铟凸块组成，氮化钛作为扩散阻挡层将铟凸块与铝基层隔开。我们测量整个结构是超导的（转变温度为1.1 K），受到铝的限制。这些互连具有26.8 mA的平均临界电流，机械剪切和热循环测试表明，这些器件具有机械鲁棒性。我们的工艺提供了一种可靠地产生适用于超导量子位的超导互连的方法。
We present a fabrication process for fully superconducting interconnects compatible with superconducting qubit technology. These interconnects allow for the three dimensional integration of quantum circuits without introducing lossy amorphous dielectrics. They are composed of indium bumps several microns tall separated from an aluminum base layer by titanium nitride which serves as a diffusion barrier. We measure the whole structure to be superconducting(transition temperature of 1.1 K), limited by the aluminum. These interconnects have an average critical current of 26.8 mA, and mechanical shear and thermal cycle testing indicate that these devices are mechanically robust. Our process provides a method that reliably yields superconducting interconnects suitable for use with superconducting qubits.