Adsorption controlled molecular beam epitaxy of rubidium barium bismuth oxide
Adsorption controlled molecular beam epitaxy of rubidium barium bismuth oxide
复制标题
铷钡铋氧化物的吸附控制分子束外延
DOI：
10.1116/1.585064
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发表时间：
1990
影响因子：
1.4
通讯作者：
E. Hartford
中科院分区：
文献类型：
--
作者：
E. Hellman;E. Hartford
在 MgO 上进行 (Rb,Ba)BiO3 分子束外延过程中，测量了铷、钡和铋的粘附系数。这种简单的立方钙钛矿是一种高温超导体，其 Rb 含量在 0.4 至 0.5 之间。粘附系数对基底温度、氧等离子体条件和入射助熔剂成分的依赖性表明，在助熔剂成分的狭窄区域中，铋和铷的吸附和解吸速率将控制薄膜的化学计量。
Measurements of the sticking coefficients for rubidium, barium, and bismuth have been made during molecular beam epitaxy of (Rb,Ba)BiO3 on MgO. This simple cubic perovskite is a high temperature superconductor for Rb fractions between 0.4 and 0.5. The dependence of the sticking coefficients on substrate temperature, oxygen plasma conditions, and on incident flux composition indicate that in a narrow region of flux compositions, adsorption, and desorption rates of bismuth and rubidium will control the stoichiometry of the film.