Pulsed-laser melting of amorphous silicon: Time-resolved measurements and model calculations
Pulsed-laser melting of amorphous silicon: Time-resolved measurements and model calculations
复制标题
非晶硅的脉冲激光熔化：时间分辨测量和模型计算
DOI：
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发表时间：
1984
期刊：
影响因子：
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通讯作者：
J. Narayan
中科院分区：
文献类型：
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作者：
D. Lowndes;R. F. Wood;J. Narayan
研究表明，自离子注入非晶硅的热导率比晶体硅低一个数量级，并且是决定离子注入硅系统对脉冲激光辐射动态响应的主导参数；非晶硅的潜热和熔化温度相对不重要。透射电子显微镜显示，在过冷度很高的液相中发生体相成核；提出了一个模拟这种效应的模型。
It is demonstrated that the thermal conductivity of self-ion--implanted, amorphized silicon is an order of magnitude less than that of crystalline silicon and is by far the dominant parameter determining the dynamical response of the ion-implanted silicon system to pulsed-laser radiation; the latent heat and melting temperature of amorphous silicon are relatively unimportant. Transmission electron microscopy indicates that bulk nucleation occurs in the highly undercooled liquid phase; a model simulating this effect is presented.