Fabrication of reduced graphene oxide micro patterns by vacuum-ultraviolet irradiation: From chemical and structural evolution to improving patterning precision by light collimation
Fabrication of reduced graphene oxide micro patterns by vacuum-ultraviolet irradiation: From chemical and structural evolution to improving patterning precision by light collimation
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DOI：
10.1016/j.carbon.2017.04.008
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发表时间：
2017-08
期刊：
影响因子：
10.9
通讯作者：
Y. Tu;H. Nakamoto;T. Ichii;T. Utsunomiya;O. P. Khatri;H. Sugimura
中科院分区：
文献类型：
--
作者：
Y. Tu;H. Nakamoto;T. Ichii;T. Utsunomiya;O. P. Khatri;H. Sugimura
用X射线光电子能谱和开尔文探针力显微镜研究了真空紫外光还原氧化石墨烯(RGO)的化学性质和结构性质随时间的变化，揭示了真空紫外光还原的机理，并将其归因于含氧官能团的局部光化学过程。论证了真空紫外光和紫外光的效率差异，并对其机理进行了探讨。用导电原子力显微镜测量了真空紫外光辐射制备的rGO双层膜的横向电导率，发现由于层间形成了新的导电路径，rGO双层膜的横向电导率高于rGO单层膜。通过准直真空紫外光，提高了真空紫外光还原图形的精度和分辨率。这种新的方法成功地在SiO_2/Si衬底上制备了高分辨率的1μm宽的导电RGO图案。
Time evolution of the chemical and structural properties of vacuum-ultraviolet (VUV) reduced graphene oxide (rGO) were studied by X-ray photoelectron spectroscopy and Kelvin-probe force microscopy to reveal the mechanism of VUV photoreduction, which can be ascribed to the local photochemical process on oxygen-containing functional groups. The difference in the efficiency between VUV and ultraviolet was demonstrated and the mechanism was discussed. The lateral electrical conductivity of VUV-produced rGO bilayer was measured by conductive atomic force microscopy, which was found to be higher than rGO monolayer due to the formation of new conductive paths between layers. The precision and resolution of VUV photo-reductive patterning was improved by collimating the VUV light. This new approach succeeded in fabricating highly-resolved 1 μm wide conductive rGO patterns on SiO2/Si substrate.