Ambipolar field-effect transistor characteristics of (BEDT-TTF)(TCNQ) crystals and metal-like conduction induced by a gate electric field
Ambipolar field-effect transistor characteristics of (BEDT-TTF)(TCNQ) crystals and metal-like conduction induced by a gate electric field
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DOI：
10.1103/physrevb.76.045111
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发表时间：
2007-07
影响因子：
3.7
通讯作者：
M. Sakai;Hirotaka Sakuma;Yuya Ito;Akinobu Saito;M. Nakamura;K. Kudo
中科院分区：
文献类型：
--
作者：
M. Sakai;Hirotaka Sakuma;Yuya Ito;Akinobu Saito;M. Nakamura;K. Kudo
Ambipolar carrier conduction has been observed in a metal-insulator-semiconductor field-effect transistor made using (BEDT-TTF)(TCNQ) crystals. The temperature dependence of the source current with the applied positive gate voltage exhibits metal-like behavior at around room temperature. The metal-like conduction transforms into thermal-activation-type behavior below $240\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. The ${I}_{\mathrm{S}}\text{\ensuremath{-}}{V}_{\mathrm{DS}}$ curve for an applied gate voltage of $80\phantom{\rule{0.3em}{0ex}}\mathrm{V}$ exhibited a corresponding change in the curvature below $240\phantom{\rule{0.3em}{0ex}}\mathrm{K}$.
Ambipolar carrier conduction has been observed in a metal-insulator-semiconductor field-effect transistor made using (BEDT-TTF)(TCNQ) crystals. The temperature dependence of the source current with the applied positive gate voltage exhibits metal-like behavior at around room temperature. The metal-like conduction transforms into thermal-activation-type behavior below $240\phantom{\rule{0.3em}{0ex}}\mathrm{K}$. The ${I}_{\mathrm{S}}\text{\ensuremath{-}}{V}_{\mathrm{DS}}$ curve for an applied gate voltage of $80\phantom{\rule{0.3em}{0ex}}\mathrm{V}$ exhibited a corresponding change in the curvature below $240\phantom{\rule{0.3em}{0ex}}\mathrm{K}$.