Morphological control of GaAs quantum dots grown by droplet epitaxy using a thin AlGaAs capping layer
Morphological control of GaAs quantum dots grown by droplet epitaxy using a thin AlGaAs capping layer
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DOI：
10.1063/1.3493262
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发表时间：
2010-10
影响因子：
3.2
通讯作者：
M. Jo;T. Mano;K. Sakoda
中科院分区：
文献类型：
--
作者：
M. Jo;T. Mano;K. Sakoda
我们演示了使用薄AlGaAs盖层来控制GaAs量子点的形态。AlGaAs层均匀地覆盖在GaAs量子点上，并提供保护，防止高达580°C的热致变形，从而提高了点质量。此外，在640°C下对覆盖algaas的量子点进行退火，使量子点的顶部变平，从而形成高度可控的量子点，其窄的非均匀宽度为28 meV。
We demonstrate the control of GaAs quantum dots morphology by using a thin AlGaAs capping layer. The AlGaAs layer uniformly covers the GaAs quantum dots and provides protections against thermally induced deformation up to 580 °C, which allows improved dot quality. In addition, annealing of AlGaAs-capped quantum dots at 640 °C flattens the top of the dots, leading to the formation of height-controlled quantum dots and their narrow inhomogeneous width of 28 meV.