Carrier confinement effects of In Ga1-N/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
Carrier confinement effects of In Ga1-N/GaN multi quantum disks with GaN surface barriers grown in GaN nanorods
复制标题
具有在 GaN 纳米棒中生长的 GaN 表面势垒的 In Ga1-N/GaN 多量子盘的载流子限制效应
DOI：
10.1016/j.optmat.2018.02.052
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发表时间：
2018
影响因子：
3.9
通讯作者：
Park Y
中科院分区：
文献类型：
--
作者：
Park Y
采用分子束外延技术在GaN纳米棒上生长了InxGa1-xN/GaN多量子盘(QDisk)，用透射电子显微镜和显微光致发光(PL)谱研究了QDisk的结构和光学性质。生长了两种类型的InGaN QDisk：一种是镶嵌在GaN纳米棒中的准3D受限InGaN柱型QDisk，另一种是镶嵌在凸缘锥形GaN纳米棒中的QDisk。柱型QDisk和凸缘锥型QDisk的荧光发射峰值和激发相关发光行为有很大的不同。用时间分辨荧光光谱研究了载流子动力学的差异。结果表明，通过将InGaN QDisk的形成限制在纳米棒的中心，载流子被限制向表面迁移，从而减少了高载流子密度下的表面复合。
Structural and optical properties of InxGa1-xN/GaN multi quantum disks (QDisks) grown on GaN nanorods by molecular beam epitaxy have been investigated by transmission electron microscopy and micro-photoluminescence (PL) spectroscopy. Two types of InGaN QDisks were grown: a pseudo-3D confined InGaN pillar-type QDisks embedded in GaN nanorods; and QDisks in flanged cone type GaN nanorods. The PL emission peak and excitation dependent PL behavior of the pillar-type Qdisks differ greatly from those of the flanged cone type QDisks. Time resolved PL was carried out to probe the differences in charge carrier dynamics. The results suggest that by constraining the formation of InGaN QDisks within the centre of the nanorod, carriers are restricted from migrating to the surface, decreasing the surface recombination at high carrier densities.