Scaling of emission currents and of current fluctuations of gated silicon emitter ensembles
Scaling of emission currents and of current fluctuations of gated silicon emitter ensembles
复制标题
门控硅发射体群的发射电流和电流波动的缩放
DOI：
10.1116/1.587371
复制
发表时间：
1994
影响因子：
1.4
通讯作者：
B. J. Zimmerman
中科院分区：
文献类型：
--
作者：
H. Busta;J. Pogemiller;B. J. Zimmerman
研究了从n=1到n= 20800的门控单晶硅发射极的发射电流的标度及其相应的电流波动。对于随机选择的集合，电流的尺度近似为n，波动的尺度近似为n - 0.16。对于选择的具有相同发射行为的系综，电流标度为n，波动标度为n - 0.5，与理论预期一致。电流波动标度指数的差异是由于集合内发射体的不良参与造成的。每个集合中只有几个发射器对总电流有贡献。因此，缩放行为可以用作评估给定过程的诊断工具。测量是在室温和压力约1×10−8 Torr下进行的。
The scaling of emission currents and of their corresponding current fluctuations of ensembles of gated, monocrystalline silicon emitters ranging from n=1 to n=20 800 emitters have been investigated. For randomly selected ensembles, the current scales approximately with n and the fluctuation with n−0.16. For selected ensembles of identical emission behavior, the current scales with n and the fluctuations with n−0.5 as is expected from theory. The discrepancy in the exponent for the scaling of the current fluctuations is caused by the poor participation of the emitters within an ensemble. Only a few emitters per ensemble contribute to the total current. The scaling behavior can thus be used as a diagnostic tool to evaluate a given process. The measurements were performed at room temperature and at pressures of approximately 1×10−8 Torr.