Epitaxial superconducting d-MoN and d-NbN thin films by a chemical solution deposition
Epitaxial superconducting d-MoN and d-NbN thin films by a chemical solution deposition
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通过化学溶液沉积外延超导 d-MoN 和 d-NbN 薄膜
DOI：
10.1016/j.jallcom.2020.154231
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发表时间：
2020
影响因子：
6.2
通讯作者：
Y.P. Sun
中科院分区：
文献类型：
--
作者：
H.Y. Tong;H.L. Zhang;Z.Z. Hui;X.W. Tang;R.H. Wei;W.H. Song;L. Hu;C.B. Cai;X.B. Zhu;Y.P. Sun
用简单的化学溶液沉积法在c切Al 2 O3衬底上制备了δ MoN和δ NbN超导薄膜，超导转变温度分别为13 K和10.3K。δ-MoN和δ-NbN薄膜的相变明显，剩余电阻率比（RRR）ρ 300 K/ρ的起始值很大，表明外延薄膜的质量很高。在100 Oe和5 K下，δ-MoN和δ-NbN薄膜的临界电流密度（Jc）分别为1.37和0.74 MA/cm 2。研究结果为制备外延超导金属氮化物薄膜提供了一条简便的途径。
Epitaxial superconducting δ-MoN and δ-NbN thin films, exhibiting a superconducting transition temperature (T c onset) of 13 K and 10.3 K, respectively, were prepared by a simple chemical solution deposition on c-cut Al 2 O 3 substrates. A sharp transition and the large residual resistivity ratio (RRR) ρ 300K/ρ onset of δ-MoN and δ-NbN thin films suggest high quality of the prepared epitaxial thin films. The critical current density (J c) under 100 Oe at 5 K is of 1.37 and 0.74 MA/cm 2 for the δ-MoN and δ-NbN thin films, respectively. The results will provide a facile route to prepare epitaxial superconducting metal nitride thin films.