Exciton spin relaxation in GaN observed by spin grating experiment
Exciton spin relaxation in GaN observed by spin grating experiment
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DOI：
10.1063/1.2430402
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发表时间：
2007
影响因子：
4
通讯作者：
T. Ishiguro;Y. Toda;S. Adachi
中科院分区：
文献类型：
--
作者：
T. Ishiguro;Y. Toda;S. Adachi
利用简并四波混频光谱研究了体相GaN的激子自旋弛豫。利用这种技术实现的光谱分辨分析有助于直接评估单个激子(A和B激子)中的自旋极化。在低温下，每个激子的自旋极化衰减非常快(τS∼1ps)。此外，在测量的温度范围内，τS比退相时间T2更快，这表明存在快速的本征自旋弛豫过程，这可以归因于GaN中具有较大的交换常数。
The authors studied the exciton spin relaxation of bulk GaN by creating spin polarization gratings using degenerate four-wave mixing spectroscopy. The spectrally resolved analysis achieved with this technique facilitated the direct evaluation of spin polarizations in the individual excitons (A and B excitons). The spin polarizations for each exciton decay very quickly (τs∼1ps) at low temperatures. Moreover the τs is faster than the dephasing time T2 throughout the measured temperature range, suggesting the existence of fast intrinsic spin relaxation processes, which can be attributed to a large exchange constant characterized in GaN.