Growth of High Quality BiFeO_3 Thin Films by Dual Ion Beam Sputtering
Growth of High Quality BiFeO_3 Thin Films by Dual Ion Beam Sputtering
复制标题
双离子束溅射生长高质量BiFeO_3薄膜
DOI：
10.1109/isaf.2011.6014140
复制
发表时间：
2011
期刊：
影响因子：
--
通讯作者：
and M. Okuyama
中科院分区：
文献类型：
--
作者：
S. Nakashima;Y. Tsujita;S. Seto;H. Fujisawa;H. Nishioka;M. Kobune;M. Shimizu;J. M. Park;T. Kanashima;and M. Okuyama
采用双离子束溅射技术，在沿[100]方向沿着0°和0.5°偏切的SrRuO 3缓冲SrTiO 3（001）衬底上，以不同的Bi 2 O3侧/Fe 2 O3侧束流比制备了350 nm厚的BiFeO 3（BFO）薄膜。在束流比为20 mA/30 mA的条件下，在0.5°切角STO衬底上沉积的BFO薄膜在室温下表现出完全饱和的D-E磁滞回线。反射极化（2 Pr）为132 μC/cm 2。在激电响应图像中也观察到了条纹畴结构。认为BFO在0.5°切边STO衬底上漏电流的改善是由于109°畴壁的减少。
350-nm-thick BiFeO3(BFO) thin films have been deposited by dual ion beam sputtering on SrRuO3-buffered SrTiO3(001) substrates of 0° and 0.5° off-cut along [100] at various Bi2O3-side/Fe2O3-side beam current ratio. The BFO thin film on 0.5° off-cut STO substrate deposited at beam current ratio of 20 mA/30 mA show fully saturated D-E hysteresis loops at room temperature. The remanent polarization (2Pr) was 132 μC/cm2. Stripe domain structure was also observed in IP piezoelectric response image. It is considered that the improvement of leakage of BFO on 0.5° off-cut STO substrate is due to reduction of 109° domain walls.