Dependence of Photovoltage on Incident Photon Energies Investigated by Photo-assisted Kelvin Probe Force Microscopy on Cu(In,Ga)Se2 Solar Cells
Dependence of Photovoltage on Incident Photon Energies Investigated by Photo-assisted Kelvin Probe Force Microscopy on Cu(In,Ga)Se2 Solar Cells
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DOI：
10.1109/pvsc.2018.8547957
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发表时间：
2018-06
期刊：
影响因子：
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通讯作者：
Hyeondeuk Yong;T. Minemoto;Takuji Takahashi
中科院分区：
文献类型：
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作者：
Hyeondeuk Yong;T. Minemoto;Takuji Takahashi
利用光辅助开尔文探针力显微镜（P-KFM）研究了Cu（In，Ga）Se 2 [CIGS]太阳电池的光电压与入射光光子能量的关系。结果发现，当最小禁带中的剩余能量较小时，随着光子能量的增加，光电压逐渐增大，而当光子能量超过禁带能量一定值时，光电压开始下降。通过与数值模拟结果的比较，讨论了这些特征与CIGS中V形带分级的关系。
Dependence of photovoltage on photon energy of incident light was investigated on Cu(In,Ga)Se2 [CIGS] solar cells by photo-assisted Kelvin probe force microscopy (P-KFM). As a result, we found that the photovoltage gradually increased as an increase of photon energy when the excess energy from the minimum bandgap was small, while the photovoltage began to decrease when the photon energy exceeded the bandgap energy by a certain value. The relationship between such features and V-shaped band grading in CIGS was discussed in comparison with some numerical simulations.