Effect of heavy doping in SnO2:F films
Effect of heavy doping in SnO2:F films
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DOI：
10.1007/bf00356009
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发表时间：
1996-06
影响因子：
4.5
通讯作者：
C. Agashe;S. Major
中科院分区：
文献类型：
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作者：
C. Agashe;S. Major
采用喷雾热分解技术在钠钙玻璃衬底上制备了掺氟二氧化锡薄膜。研究了不同氟掺杂浓度（0 ~ 350at%）的薄膜的结构和电子输运性质。X射线衍射技术和霍尔效应测量用于这项工作。掺杂对薄膜的生长速率有很大的影响，特别是在较高的掺杂水平下。薄膜是多晶的，并且优先沿[200]沿着取向。这种优先增长在确定输运性质中起着主导作用。值得注意的是，电荷载流子迁移率直接受这种优选生长的支配。电导率完全由载流子浓度决定。载流子浓度的相应变化被用来建议氟掺杂剂在SnO 2晶格中的位置选择。
Thin films of fluorine-doped tin dioxide (SnO2:F) were deposited by a spray pyrolysis technique on soda lime glass substrates. Structural and electronic transport properties of the films deposited with different doping levels of fluorine (zero to 350 at %) were investigated. X-ray diffraction technique and Hall effect measurements were used for this work. Growth rate of the films was considerably affected by doping, specially at higher doping levels. The films were polycrystalline and preferentially oriented along [200]. This preferred growth played a dominant role in determining the transport properties. Notably the charge carrier mobility was directly governed by this preferred growth. The electrical conductivity was totally governed by the carrier concentration. The respective changes in carrier concentration were used to suggest the site selection of the fluorine dopant in the SnO2lattice.