263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities
263 nm wavelength UV-C LED on face-to-face annealed sputter-deposited AlN with low screw- and mixed-type dislocation densities
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DOI：
10.35848/1882-0786/ac66c2
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发表时间：
2022-05-01
影响因子：
2.3
通讯作者：
Miyake, Hideto
中科院分区：
文献类型：
--
作者：
Uesugi, Kenjiro;Kuboya, Shigeyuki;Miyake, Hideto
对于深紫外光学器件的应用，面对面退火溅射沉积AlN （FFA Sp-AlN）是蓝宝石衬底上传统金属有机气相外延（MOVPE）制备AlN模板的有前途的替代品。然而，FFA Sp-AlN倾向于表现出与AlGaN生长相关的丘状生成和表面形貌恶化。在本研究中，我们优化了AlN的溅射沉积条件和AlGaN的MOVPE生长条件，分别减少了丘密度和丘尺寸。在确认AlGaN表面平坦化后，我们在FFA Sp-AlN上制备了263 nm波长的UV-C led，在没有硅胶封装和有硅胶封装的情况下分别获得了约4.9%和8.0%的最大外量子效率。
Regarding deep-ultraviolet optical device applications, face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) is a promising alternative to the conventional metalorganic vapor phase epitaxy (MOVPE)-prepared AlN templates on sapphire substrates. However, FFA Sp-AlN tends to exhibit AlGaN growth-related hillock generation and surface morphology deterioration. In this study, we optimized the sputter-deposition conditions for AlN and MOVPE growth conditions for AlGaN to respectively reduce hillock density and size. After confirming AlGaN surface-flattening, we fabricated 263 nm wavelength UV-C LEDs on the FFA Sp-AlN and achieved maximum external quantum efficiencies of approximately 4.9% and 8.0% without and with silicone encapsulation, respectively.