Electrical properties’ maxima in thin films of the lead zirconate–lead titanate solid solution system
Electrical properties’ maxima in thin films of the lead zirconate–lead titanate solid solution system
复制标题
DOI：
10.1063/1.115263
复制
发表时间：
1995-12
影响因子：
4
通讯作者：
H. Chen;K. Udayakumar;C. J. Gaskey;L. Cross
中科院分区：
文献类型：
--
作者：
H. Chen;K. Udayakumar;C. J. Gaskey;L. Cross
采用双光束激光干涉技术测量了PbZrO 3-PbTiO 3（PZT）固溶体系统中薄膜的压电应变系数随组成的变化。这种压电的成分依赖性，以及相关的介电和铁电性能的薄膜1 μm厚的不同Zr/Ti比，沉积在镀铂硅基板上使用修改的溶胶-凝胶路线，对应于未掺杂的PZT陶瓷的有效准同型相界组成的数据。在准同型相界附近的Pb（Zr0.52Ti0.48）O3薄膜的纵向压电系数为194 pC/N，介电常数为1310，反射极化为36 μC/cm 2。
The piezoelectric strain coefficients have been measured as a function of composition for films in the PbZrO3–PbTiO3 (PZT) solid solution system, using a double‐beam laser interferometry technique. This compositional dependence of piezoelectric, and the associated dielectric and ferroelectric properties for films 1 μm in thickness with varying Zr/Ti ratio, deposited on platinized silicon substrates using a modified sol‐gel route, corresponds to data reported for undoped PZT ceramics with respect to the effective morphotropic phase boundary composition. Films with composition near the morphotropic phase boundary, Pb(Zr0.52Ti0.48)O3, show enhanced values of the longitudinal piezoelectric coefficient, 194 pC/N; dielectric permittivity, 1310; and remanent polarization, 36 μC/cm2.