Transmittance of Tin Films in the Far Ultraviolet

Transmittance of Tin Films in the Far Ultraviolet
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锡膜在远紫外线下的透过率

DOI:
10.1364/josa.56.000189
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发表时间:
1966
影响因子:
--
通讯作者:
D. W. Angel
D. W. Angel
中科院分区:
--
文献类型:
--
作者:
K. Codling;R. Madden;W. Hunter;D. W. Angel

文献摘要

被引文献

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利用光电和照相检测,在 1000-80 A 光谱范围内详细研究了厚度范围为 680 至 1690 A 的锡膜的透射光谱。使用多线源的光电结果给出了透射率的测量值,而使用NBS 180-MeV电子同步加速器辐射的纯连续谱的摄影结果显示了测量数据点之间的透射率曲线的行为。这些新的测量提供了连续和扩展的信息,可以根据原子和固态参数来解释锡的传输特性。特别是,摄影数据以更高的精度定位 NIV,V X 射线边缘 [NV = 23.8(±0.1) eV; NIV = 24.9(±0.1) eV]。具有实际重要性的是,厚度为 680 A 的薄膜在 700 至 525 A 范围内的透射率超过 20%。理论意义在于以 190 A 附近为中心的宽吸收特征,这是由于 4d 电子跃迁到 f 对称连续态的振荡强度很高。
The transmission spectra of tin films ranging in thickness from 680 to 1690 A have been studied in detail in the spectral range 1000–80 A, utilizing both photoelectric and photographic detection. The photoelectric results, using a multiline source, give measured values of transmittance, while the photographic results, using the pure continuum radiated by the NBS 180-MeV electron synchrotron, show the behavior of the transmittance curves between measured data points. These new measurements, giving continuous and extended information, allow an interpretation of the transmission characteristics of tin in terms of atomic and solid-state parameters. In particular, the photographic data locate the NIV,V x-ray edges with increased accuracy [NV = 23.8(±0.1) eV; NIV = 24.9(±0.1) eV]. Of practical importance, a film of thickness 680 A has a transmittance of over 20% from 700 to 525 A. Of theoretical significance is a broad absorption feature centered near 190 A, due to the high oscillator strength for transition of the 4d electron to continuum states of f symmetry.