Electrically coupling complex oxides to semiconductors: A route to novel material functionalities
Electrically coupling complex oxides to semiconductors: A route to novel material functionalities
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DOI：
10.1557/jmr.2016.496
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发表时间：
2017-01
影响因子：
2.7
通讯作者：
J. Ngai;K. Ahmadi-Majlan;J. Moghadam;M. Chrysler;D. Kumah;Fred Walker;Chong H. Ahn;T. Droubay;Yingge Du;Scott A Chambers;Mark E Bowden;Xuan Shen;Dong Su
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文献类型：
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作者：
J. Ngai;K. Ahmadi-Majlan;J. Moghadam;M. Chrysler;D. Kumah;Fred Walker;Chong H. Ahn;T. Droubay;Yingge Du;Scott A Chambers;Mark E Bowden;Xuan Shen;Dong Su
复合氧化物和半导体因其各自的离子性质和共价性质而显示出截然不同但互补的性质。通过在外延异质结构中将复合氧化物与传统半导体电耦合，有可能实现组成材料之外的增强或新颖的功能。将复合氧化物与半导体电耦合的关键是控制外延生长的氧化物的物理结构以及界面的电子结构。在这里，我们讨论了如何通过控制钙钛矿A位和B位阳离子的组成来控制半导体复合氧化物异质结的物理和电子结构。文中将讨论两种典型的异质结构：Ba1−xSrxTi3/Ge和SrZrTi1−xO3/Ge。在Ba1−xSrxTiO3/Ge的情况下，我们讨论了如何通过A位组成来工程应变，使前者的可重定向的铁电极化与半导体中的载流子耦合。以SrZrxTi1，−xO_3/Ge为例，我们讨论了如何利用B位组成来控制界面的能带偏移。类似于化合物半导体材料之间的异质结，能带偏移量的控制，即带隙工程，提供了一种将复合氧化物电耦合到半导体以实现一系列功能的途径。
Complex oxides and semiconductors exhibit distinct yet complementary properties owing to their respective ionic and covalent natures. By electrically coupling complex oxides to traditional semiconductors within epitaxial heterostructures, enhanced or novel functionalities beyond those of the constituent materials can potentially be realized. Essential to electrically coupling complex oxides to semiconductors is control of the physical structure of the epitaxially grown oxide, as well as the electronic structure of the interface. Here we discuss how composition of the perovskite A- and B-site cations can be manipulated to control the physical and electronic structure of semiconductor—complex oxide heterostructures. Two prototypical heterostructures, Ba_1− x Sr_xTiO_3/Ge and SrZr_xTi_1− x O_3/Ge, will be discussed. In the case of Ba_1− x Sr_xTiO_3/Ge, we discuss how strain can be engineered through A-site composition to enable the re-orientable ferroelectric polarization of the former to be coupled to carriers in the semiconductor. In the case of SrZr_xTi_1− x O_3/Ge we discuss how B-site composition can be exploited to control the band offset at the interface. Analogous to heterojunctions between compound semiconducting materials, control of band offsets, i.e., band-gap engineering, provides a pathway to electrically couple complex oxides to semiconductors to realize a host of functionalities.