Nonlinear excitonic optical absorption in GaInAs/InP quantum wells
Nonlinear excitonic optical absorption in GaInAs/InP quantum wells
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GaInAs/InP 量子阱中的非线性激子光吸收
DOI：
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发表时间：
1987
期刊：
影响因子：
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通讯作者：
J. Riffat
中科院分区：
文献类型：
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作者：
A. M. Fox;A. Maciel;M. G. Shorthose;J. F. Ryan;M. Scott;J. I. Davies;J. Riffat
研究了室温下GaInAs/InP量子阱威尔斯的光吸收饱和现象。使用可调谐连续Co：MgF 2激光器的光激发，我们发现在n=1重空穴激子处共振激发时的饱和强度为70 W cm−2，并且我们推导出非线性吸收和折射系数的值分别为−60 cm W−1和−0.3 cm 2 kW−1。量子阱中的饱和强度显著低于体GaInAs中的饱和强度，并且也低于GaAs量子威尔斯中的饱和强度。
We have studied the saturation of optical absorption in GaInAs/InP quantum wells at room temperature. Using optical excitation from a tunable cw Co:MgF2 laser, we find a saturation intensity of 70 W cm−2 when exciting resonantly at the n=1 heavy‐hole exciton, and we deduce values of the nonlinear absorption and refraction coefficients −60 cm W−1 and −0.3 cm2 kW−1, respectively. The saturation intensity in the quantum well is significantly lower than in bulk GaInAs, and also in GaAs quantum wells.