Distribution of Average Electric Field in tris-(8-hydroxyquinoline)aluminum and 4,4′-bis[N-(1-naphthyl)-N-phenylamino]-biphenyl-based Double-Layer Light-Emitting Diodes
Distribution of Average Electric Field in tris-(8-hydroxyquinoline)aluminum and 4,4′-bis[N-(1-naphthyl)-N-phenylamino]-biphenyl-based Double-Layer Light-Emitting Diodes
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三(8-羟基喹啉)铝和4,4-双[N-(1-萘基)-N-苯氨基]-联苯双层发光二极管的平均电场分布
DOI：
10.1143/jjap.39.1382
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
T. Tsutsui
中科院分区：
文献类型：
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作者：
Toshiki Yamada;F. Rohlfing;T. Tsutsui
用电吸收光谱方法测定了以4，4′-bis[N-(1-naphthyl)-N-phenylamino]-biphenyl(α)为空穴传输材料，三(8-羟基喹啉)铝(Alq)为电子传输和发射材料制备的双层有机电致发光二极管结构的平均电场分布。我们发现，在正向偏压下，α-npd层中的电场比在α-npd层中的电场小得多，而在反向偏压下，alq层中的电场与Alq-npd层中的电场基本相同。这可能归因于在α-NPD中注入了较多的空穴和空穴的输运，以及AlQ的空穴阻挡特性。在开启电压附近，观察到Alq层和α-NPD层的平均电场都发生了突变。
We have determined the distribution of the average electric field in double-layer organic light-emitting diode structures fabricated with 4,4′-bis[N-(1-naphthyl)-N-phenylamino]-biphenyl (α-NPD) as hole-transport material and tris-(8-hydroxyquinoline)aluminum (Alq) as electron-transport and emissive material, by means of electroabsorption spectroscopy. We found that the electric field in the α-NPD layer is considerably smaller than that in the Alq layer in the forward bias and that most of the dc bias is used for the formation of the electric field in the Alq layer, especially below the turn-on voltage, whereas in the reverse bias, the electric field in the Alq layer is identical to that in the α-NPD layer. This could be attributed to the injection of a relatively large amount of holes from the indium-tin-oxide electrode into the α-NPD and their transport, and the hole-blocking property of Alq. An abrupt change of the average electric field in both the Alq and α-NPD layers was observed in the vicinity of the turn-on voltage.