Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes
Laser-induced periodic structures for light extraction efficiency enhancement of GaN-based light emitting diodes
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DOI：
10.1364/oe.20.005689
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发表时间：
2012-02-27
期刊：
影响因子：
3.8
通讯作者：
Sheu, Jinn-Kong
中科院分区：
文献类型：
--
作者：
Chen, Jiun-Ting;Lai, Wei-Chih;Sheu, Jinn-Kong
采用激光诱导周期性表面结构技术，在p-GaN表面的半球形微米级孔内同时形成具有螺旋状纳米级结构的双尺度粗糙结构（DSRS），以提高发光二极管（LED）的光提取效率。在注入电流为 20 mA 时，DSRS-LED 的光输出功率比传统 LED 高 30%。光输出功率的增强可归因于光子从织构p-GaN表面增加的表面积逸出的可能性增加。 (c) 2012 年美国光学学会
The laser-induced periodic surface structure technique was used to form simultaneously dual-scale rough structures (DSRS) with spiral-shaped nanoscale structure inside semi-spherical microscale holes on p-GaN surface to improve the light-extraction efficiency of light-emitting diodes (LEDs). The light output power of DSRS-LEDs was 30% higher than that of conventional LEDs at an injection current of 20 mA. The enhancement in the light output power could be attributed to the increase in the probability of photons to escape from the increased surface area of textured p-GaN surface. (c) 2012 Optical Society of America